Abstract
We present results for the anisotropic diffusion coefficient of selenium, isoelectronic impurity, in Bi2Te3 along the solidus. The single crystals were prepared by travelling heater method and they have a high crystalline quality. The experimental conditions permitted us to obtain a definite stoichiometric deviation, and diffusion profiles were obtained by SIMS. We propose a mechanism of atomic diffusion by antisite defects and thermal vacancies taking into account of the anisotropy of the diffusion coefficients.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
