Abstract
Laser-induced anisotropic chemical etching of silicon is reported, by using a 488 nm Ar+ laser in direct write mode and high-pressure Cl2 process gas. Surface modifications directly comparable with conventional anisotropic wet etching methods have been obtained. A main role in the process is played by the masking effect due to a thin uniform SiO2 film grown on the Si substrate. An explanation of the etching mechanism is attempted.
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