Abstract

The analytic Green's function proposed by Allen and the recently developed technique for obtaining the complex band structure and the evanescent states are used to study the electronic properties of semiconductor surfaces. This approach enables one to obtain the exact solution to the surface Green's function with great computational efficiency. Angle-resolved local density of states for five (110) surfaces, including GaAs, GaP, InP, InSb, and ZnTe, are reported. All calculations are performed within a realistic ten-band tight-binding model. The effects due to surface relaxation are also discussed.

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