Abstract
Angle resolved photoemission data is presented for single crystals of the layered semiconductor PbI 2. The geometric form of the valence electron energy bands has been mapped using a simple approximation and the possible electronic origins of these bands are discussed. Such band dispersion effects in angle resolved measurements are contrasted with HeII excited data for the localised Pb 5 d 5 2 core level component, where “flat” band behaviour and only weak residual final state scattering effects may be discerned. Finally we comment on the role of the incoming photon in such experiments.
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