Abstract
We have investigated the initial stage of oxidation on C-face 4H-SiC using angle-resolved X-ray photoelectron spectroscopy. Analyses of Si 2p and C 1s photoelectron spectra show that the oxidation rate changes reflecting the crystal structure of 4H-SiC and that the amount of silicon oxycaribide species is the minimum when the oxide thickness is about 0.85 nm.
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