Abstract

We have investigated the impact of F-doing on CeO1-xFxBiS2 in terms of the electronic-structural parameters of Anderson's impurity-model analysis. It was recently reported using Ce L3-edge x-ray absorption spectroscopy (XAS) that CeOBiS2 falls in the Ce valence fluctuation regime and the F-doping drives the system into the Kondo regime. The Ce L3- edge XAS spectra with the various F-doping levels can be reproduced by adjusting the transfer integral in the Anderson's impurity model. The present analysis indicates that the F-doping to the system corresponds to the decrease of the Ce-Bi transfer integral.

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