Abstract
We report an enhancement in the ferromagnetic characteristics of Zn0.95Co0.05O thin films due to the localization of charge carriers. Epitaxial thin films of Zn0.95−xCo0.05GaxO (x=0–0.05) were grown on single-crystal sapphire (0001) substrates by pulsed laser deposition technique. The role of charge carrier localization on the electrical and magnetic properties of ZnO:Co was studied by introducing Ga into the system. It was observed that Ga plays a significant role in affecting both the electrical transport mechanism as well as the magnetization of the material. Electrical resistivity of Zn0.95Co0.05O at room temperature was ∼96 mΩ cm and exhibited metal-like temperature dependence, although strongly influenced by electron-electron (e-e) interactions. Strong e-e interaction was understood to arise because of the randomness introduced in the crystal potential of ZnO by the cobalt dopants. As the Ga dopants are introduced, randomness in crystal potential and hence the disorder further increases resulting in the Anderson localization of the carriers. The increase in localization was accompanied by a significant enhancement in the magnetic moment from 0.75μB/Co in Zn0.95Co0.05O films to 1.6μB/Co in Zn0.90Co0.05Ga0.05O.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
