Abstract
Atomic force microscopy was used to investigate the effects of templating parameters on focused ion beam patterned single-, two-, and three-layer InAs/GaAs(001) quantum dot structures. The number of layers, focused ion beam dwell time, and pattern spacing affected the fidelity of the quantum dots. The highest single dot fidelities were found in regions with 1 and 3 ms dwell times and 1 and 2 μm pattern spacings. A two-layer region patterned with 1 ms dwell time and 1 μm spacing was found to have 100% single quantum dot fidelity with no off-site dot nucleation in a 20 × 20 μm2 scan. Holes that were milled with 6 and 9 ms dwell times and 0.25 μm spacing became faceted, that is, deep, tightly packed, and rhombic, by the third layer. Autocorrelation of the images was used to analyze the periodicity and size of the features.
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