Abstract
The 3-D poisson's equation with eight boundary conditions is solved analytically and an analytical model of potential profile and threshold voltage for rectangular gate-all-around III–V nanowire MOSFET device is developed with quantum correction. Dependence of threshold voltage on channel width, oxide thickness, gate-length, doping and channel material composition are determined from the developed model with experimental and ATLAS verification‥ The model agrees well with experimental and simulation results and offers an insight to the device performance.
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