Abstract
With the availability of advanced computing capability, it is fashionable to analyze and design insulated-gate bipolar transistors (IGBTs) using sophisticated 2-D and 3-D numerical simulation tools. However, analytical modeling of IGBTs allows a deeper understanding of the physics of operation, which can foster innovation. This paper reviews 1-D analytical models developed for the IGBT on-state characteristics, switching behavior, and safe operating area for symmetric (nonpunchthrough) and asymmetric (punchthrough) devices.
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