Abstract
Analytical models of drain current of strained-Si/strained-Si 1− Y Ge Y /relaxed-Si 1− X Ge X ( X < Y) n-channel and p-channel MOSFETs are presented. The field-dependent mobility variations and velocity saturation of carriers are taken into account in these models. The drain current model of p-channel MOSFET considers carrier transport at the top heterointerface in SiGe as well as at the Si/SiO 2 interface. These models have been implemented in SABER, a circuit simulator. The results from the models show excellent agreement with experimental data.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
