Abstract
We propose a unique two dimensional analytical model of a dual material gate partially depleted (DMG-PD) SOI MOSFET. The model includes the calculation of the surface potential, electric field along the channel and threshold voltage using the minimum surface potential. The model takes into account the effects of body doping concentration, gate oxide, buried oxide and silicon film thickness, lengths of the gate metals and their work functions, applied drain and substrate biases. It is seen that the short channel effects in this structure arc diminished because of the step in the surface potential profile which screens the drain potential variations. The results predicted by the model are verified using accurate two-dimensional numerical simulations.
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