Abstract
As discussed elsewhere recently, metastable CxSi1-x epitaxial alloys on Si(100) have been fabricated which may eventually find utility in Si bipolar or FET device technology where a heterobarrier or specific strain control would be desirable. Research on the metastable binary CxSi1-x system is also the logical first step toward development of the metastable ternary CxSiyGez system where the possibility of independently altering lattice parameter, strain, and band gap exists. Since the initial report of the epitaxial growth of dilute CxSi1-x alloys on Si(l00) by remote plasma-enhanced chemical vapor deposition (RPECVD), there has also been progress in this field using solid source molecular beam epitaxy (MBE); particularly in the growth of strained layer Si/CxSi1-x/Si superlattices. We report on MBE growth and characterization of CxSi1-x epitaxial alloys grown to a substantial thickness.An MBE chamber equipped with independent e-beam evaporation of Si and graphite and a base pressure of 5×10−10 Torr was used for growth.
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Schedule a callMore From: Proceedings, annual meeting, Electron Microscopy Society of America
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