Abstract
The problems of strain and piezoelectric effect are solved for a buried semiconductor quantum dot (QD) of conical shape with wetting layer, within continuum elastic model. Analytical results are obtained for the isotropic case of the elasticity. For the isotropic dielectric constant case, we provide an analytical expression of the piezoelectric potential. An extension of Eshelby’s [Proc. R. Soc. Lond. A 241, 376 (1957)] continuum elasticity theory of inclusions to QDs with wetting layers is adopted. The results for self-assembled InAs/GaAs QDs are compared with numerical results obtained with an atomistic model based on the valence force field method. We find good agreement between the results obtained with the two methods.
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