Abstract
Gallium nitride (GaN) devices are advantageous over conventional Silicon (Si) devices in terms of their small size, low on-resistance, and high dv/dt characteristics; these ensure a high integrated density circuit configuration, high efficiency, and fast switching speed. Therefore, in the diagnosis and protection of a system containing a GaN power semiconductor, the transient state for accurate switch current measurement must be analyzed. The pick-up coil, as a current sensor for switch current measurement in a system comprising a surface-mount-device-type nonmodular GaN power semiconductor, has the advantages of a higher degree-of-freedom configuration for its printed circuit board, a relatively small size, and lower cost than other current sensors. However, owing to the fast switching characteristics of the GaN device, a bandwidth of hundreds MHz must be secured along with a coil configuration that must overcome the limitations of relatively low sensitivity of the conventional current sensor. This paper analyzes the pick-up coil sensor models that can achieve optimal bandwidth and sensitivity for switch current measurement in GaN based device. So four configurable pick-up coil models are considered and compared according to coil-parameter using mathematical methods, magnetic, and frequency-response analysis. Finally, an optimal coil model is proposed and validated using a double-pulse test.
Highlights
A power semiconductor with a wideband gap (WBG) is a device capable of high-density integration owing to its high energy efficiency and high-speed switching and has the advantage of a small size with strong dv/dt characteristics at a high temperature compared to a conventional Si device
Compared to the existing toroidal-type Rogowski coil, the structure of the pick-up coil is designed with a higher degree of freedom because its structure can attract a portion of the magnetic field flux and not the entire magnetic field of radiation in all directions (360◦ ) generated from the measured current
This paper presented a comparison between the models of pick-up coils that can be embedded in Thiscircuits paper using presented a comparison between the power modelssemiconductors
Summary
A power semiconductor with a wideband gap (WBG) is a device capable of high-density integration owing to its high energy efficiency and high-speed switching and has the advantage of a small size with strong dv/dt characteristics at a high temperature compared to a conventional Si device. Fast-switching-power semiconductors, such as GaN, are sensitive to noise and loop inductance due to high dv/dt, and sufficient bandwidth is required to increase the transient response characteristics It experiences the problem of relatively low sensitivity due to the nature of the air core [33,34,35,36,37]. Compared to the existing toroidal-type Rogowski coil, the structure of the pick-up coil is designed with a higher degree of freedom because its structure can attract a portion of the magnetic field flux and not the entire magnetic field of radiation in all directions (360◦ ) generated from the measured current With such a structure, the pickup coil can be configured as a PCB built-in type in a nonmodular power semiconductor as well as a modular power semiconductor.
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