Abstract
Thin films of Bi 2S 3 were grown by various physical deposition techniques such as conventional vacuum evaporation of the compound, flash evaporation and the hot-wall technique. Deposits of the compound were also obtained by solid state reaction, vapour phase reaction and solid-vapour interaction. Detailed studies on the stoichiometry, crystallinity and homogeneity of these deposits were made as a function of the deposition parameters and the post-deposition treatment. A critical evaluation of the different growth procedures in obtaining the compound semiconductor thin films is given on the basis of the experimental results.
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