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Abstract
Abstract This study investigates trap analysis of the DC and RF performance of Al0.3Ga0.7N/GaN Metal-Oxide-Semiconductor high electron mobility transistor (MOSHEMT) with double π-gate technology. The motivation behind double π-gate technology is to evenly distribute the peak electric field and reduce hot electron generation. This gate design helps to lower hot-electron generation across various operating conditions while maintaining device performance, particularly in the lower millimeter-wave frequency range. High dielectric constant HfO2 is used as gate oxide, which helps to lower the gate leakage current. Near the conduction band (CB), the electron quasi-fermi level of 30 meV is achieved. The practical application of HfO2 in AlGaN/GaN HEMTs is limited by its high oxygen permeability, brittleness, and reactivity with moisture and CO2, which can cause mechanical stress and form hafnium carbonate, adversely affecting device performance. Future designs of the double-π gate structure could enhance electrostatic control, reduce short-channel effects, and improve high-frequency performance by scaling down gate dimensions and using high-k or novel dielectric materials. Additionally, optimization for mm-wave and THz applications would help to maintain electron mobility and minimize parasitic capacitance and resistance.
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