Abstract
We investigated the transmission characteristics of Cu/CNT composite Through-silicon via (TSV) interconnects. The equivalent lumped-element circuit model was established, with the effective conductivity employed for impedance extraction. The impacts of CNT filling ratio, temperature, and other geometrical parameters on the performance were examined.The sensitivity analysis of Cu/CNT composite TSVs was carried out. The electrical performance of Cu/CNT composite TSVs were optimized by utilizing low-permittivity dielectrics or even air-gap.
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