Abstract
The purpose of this work is to briefly discuss the effects of the total ionizing dose (TID) on MOS devices in order to estimate the results of future irradiation tests on temperature-compensated voltage references that are implemented on a mixed-signal chip fabricated using IBM 0.13 µm technology. The analysis will mainly focus on the effects of the parametric variations on different voltage references. Monte-Carlo analyses were performed in order to determine the effects of threshold voltage shifts in each transistor on the output voltage.
Highlights
Space and high-altitude aeronautical applications of electronics are exposed to a continuous action of ionizing radiation
The transient effects occur when an energetic particle interacts with a sensitive region of the structure, resulting in a generation of charge that produces an electric pulse at a circuit node (Single Event Effect–SEE)
Accumulated effects can be categorized into displacement damage (DD) and total ionizing dose effects (TID)
Summary
Space and high-altitude aeronautical applications of electronics are exposed to a continuous action of ionizing radiation. Ionizing radiation generates electron-hole pairs in the oxides of semiconductor devices. The purpose of this work is to review the TID effects on MOS devices in order to estimate the effects of an irradiation test on different temperature-compensated voltage references that are integrated in one chip using IBM 0.13 μm technology.
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