Analysis of the switching speed limitation of wide band-gap devices in a phase-leg configuration

Abstract

Advanced power semiconductor devices, especially wide band-gap devices, have inherent capability for fast switching. However, due to the limitation of gate driver capability and the interaction between two devices in a phase-leg during switching transient (cross talk), the switching speed is slower than expected in practical use. This paper focuses on identifying the key limiting factors for switching speed. The results provide the basis for improving gate drivers, eliminating interference, and boosting switching speed. Based on the EPC2001 Gallium Nitride transistor, both simulation and experimental results verify that the limiting factors in the gate loop include the pull-up (-down) resistance of gate driver, rise (fall) time and amplitude of gate driver output voltage; among these the rise (fall) time plays the primary role. Another important limiting factor of device switching speed is the spurious gate voltage induced by cross talk between two switches in a phase-leg. This induced gate voltage is not only determined by the switch speed, but also depends on the gate loop impedance, junction capacitance, and operating conditions of the complementary device.