Abstract
Indium gallium zinc oxide is an amorphous oxide semiconductor (AOS) which has been regarded as a substitute for hydrogenated amorphous silicon. Other AOSs have been investigated but have needed multiple cations to reach high mobilities. Nonetheless, amorphous tin oxide (a-SnOx) has demonstrated thin-film transistors (TFTs) with high mobility. Here, we analyze the impact of the interface between the HfO2 dielectric and the tin oxide active layer on the performances of the TFTs. By analysis of electrical (through TFT devices) and chemical (through X-ray photoelectron spectroscopy measurements) properties and using technology computer-aided design, we can understand the origin of the high field-effect mobility (>90 cm2/V s). From the low contact and channel resistances and the large carrier concentration (∼1019 cm–3) to the large conduction band offset (2.59 eV) and the low exponentially distributed conduction band tail state (NTA) of 2.3 × 1019 cm–3 eV–1, the origin of the high performance has been investigated in depth.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
