Abstract
In this work, the effects of temperature on the DC and RF characteristics of lateral-diffused metal–oxide–semiconductor (LDMOS) transistors were studied. Devices with different layout structures were fabricated using a 40 V LDMOS process. The temperature coefficients of the threshold voltage and channel mobility are negative and their values are similar for devices with fishbone and ring structures. In addition, we found that both the cutoff frequency ( fT) and the maximum oscillation frequency ( fmax) decrease with increasing temperature. The variations of fT with different temperatures are not only affected by the change in transconductance but also affected by the drain resistance. Finally, the temperature behaviors of S-parameters were measured, and the ring structure showed less S22 variation with different temperatures than the fishbone structure. We extracted the model parameters of the devices to explain this observation.
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