Abstract
Silicon-on-insulator structures prepared using the separation by implanted oxygen technology are studied by means of Brillouin light scattering. The deviation in the experimental wave velocity for modes guided within the SiO 2 buried layer is ascribed to the presence of silicon inclusions dispersed in the oxide matrix. The presence of inclusions is taken into account by means of an effective medium theory which allows to determine the inclusion volume fraction and the anisotropy of their orientation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
