Abstract

The results of analytically based calculations of the various strain components within and outside InAs quantum dots (QDs) in a GaAs matrix are presented. The calculations performed here take into account cubic crystal strain anisotropy and spatial grading of the indium composition. The assumptions regarding the shape and compositional profile of the QDs have been refined and reflect experimental findings from previous morphological studies. Generally, cone‐shaped QDs are modeled with and without truncation, and the composition is either pure InAs or is assumed to be linearly graded. It is shown that the biaxial strain component decays more rapidly in the case of an isolated QD compared with the upper QD in a structure with two QDs separated by 10 nm GaAs. Our calculations provide new insight into trends in (multilayer) QD structures that are not easily to observe experimentally.

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