Abstract
The measurement and control of gas flow are critical in many manufacturing processes. Semiconductor manufacturers, in particular, require a number of different process gases for etching, deposition, oxidation, doping and inerting applications. In many of these, as well as other industrial and research processes including measurement of partial pressures with residual gas analyzers (RGAs), calibration of vacuum gauges, and conductance of a conductance-reducer , accurate measurement and stability of the gas pressure within the reaction vacuum chamber is essential. In the present work, pressure distribution in the chamber of a newly developed flow control system was investigated for three gases (Ar, N2, and He) range from 1Pa to 133Pa. For all the gases, the relative deviations in pressure distribution near the gas inlet and outlet were in the range of −1.3% and 1.2% respectively.
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