Abstract
Metal-oxide-silicon (MOS) device degradation due to trapped holes in thermally grown thin (22–33 nm) SiO 2 gate oxides under Fowler-Nordheim (FN) stress at low injected electron fluence has been analyzed theoretically. A comparative study of degradation under various modes of FN stressing (constant current and constant voltage) from the accumulated layer of 〈100〉 n-Si of n-PolySi gate MOS capacitors is presented. The present analysis is based on tunneling electron initiated band-to-band impact ionization in SiO 2 as the possible source of generated holes. The theoretical analysis is extended with Gaussian and uniform distribution of trapped holes in the oxide. The theoretical results obtained from the model are in good agreement with the experimental results of FN threshold voltage shift as a function of electron fluence obtained by Fazan et al.
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