Abstract
The letter presents theoretical analysis of spontaneous emission in AlGaN wurtzite quantum wells. It is found that the combined effects of strain, internal electric field, and many-body Coulomb interactions lead to a significant dependence of optical properties on quantum-well configuration. In particular, the effects of the internal electric field are mitigated for certain Al concentration in the quantum well. Calculations of the emitted photon energy show good agreement with experimental measurements. Presented results are of interest for applications such as ultraviolet light-emitting diodes and lasers.
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