Abstract
A dielectric modulated (DM) dual-sided dopingless (DL) GaAs <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> Sb <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> /In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.53</sub> Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.47</sub> As hetero-junction (HJ) Tunnel FET (DM-DDL-HTFET) based label-free biosensor architecture having hetero-gate-dielectric (HGD) has been offered. Here, virtual pocket of N <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -category with differing electronic concentration (Ne) has been realized through the adjustment of source-sided-channel length (LSC) below the gate region. Primarily, the optimized structure has been investigated considering energy-band gap, mole fraction of HJ material and gate-to-source spacer thickness (Lgap,S). Next, the efficiency of optimized DDL-HTFET model excluding nano-gap has been juxtaposed with the Si-based TFET contenders. The effect on Ne, surface potential (ψ), drain-current (IDS), and their equivalent sensitivity have been analyzed by the ATLAS device simulator considering the steric hindrance issues. 37.54% and 54% improvement in threshold voltage sensitivity can be obtained for DM-DDL-HTFET over single side DL-SiTFET (DM-SDL-SiTFET) due to variation of oxide layer thickness (Tox) and source-side dielectric material respectively. Moreover, DM-DDL-HTFET offers 58.64% (42.18%) and 44.44% (73.33%) inferior minimum noise figure and noise conductance over DM-SDL-SiTFET at 50 (250) GHz frequency correspondingly after immobilization of APTES biomolecules.
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