Abstract
An analysis technique is developed for the purpose of determining which semiconductor laser parameter is responsible for degradation. The technique allows one to distinguish between the two modes of degradation: (1) a reduction in electrical carrier injection efficiency or (2) an increase in optical loss. In the case of increasing optical loss, one can determine where longitudinally along the waveguide this degraded optical loss is occurring. Experimentally, we apply the technique to an earlier generation of high-power, single-mode 14XX-nm pump lasers under various accelerated aging conditions.
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