Abstract
It is known that the epitaxial quality of alkaline-earth fluorides on semiconductors is not simply related to the degree of lattice mismatch. The interfacial structure in two such systems has been examined by high-resolution electron microscopy. For the high-mismatch system (9%), BaF2 on (111) Ge, an ‘‘incommensurate’’ interface is observed. In contrast, the lower mismatch BaF2 on (100) InP system (5%), displays a locally ‘‘commensurate’’ interface with closely spaced misfit dislocations. These observations demonstrate that epitaxy can occur with or without strong bonding across the substrate overlayer interface, depending on the lattice mismatch. The discovery of a truly incommensurate, epitaxial interface [in the BaF2 on (111) Ge system] is furthermore quite unique.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
