Abstract
Electron injection into oxide traps of metal/high-k oxide/interlayer/silicon structures is investigated by modeling. We demonstrate the influence on flat-band voltage by the sharpness of the interlayer/silicon interface and by the properties of traps in the oxide. Since charge carrier injection in this kind of structures may take place by two different processes simultaneously, excluding one or the other in the interpretation of data may lead to considerable erroneous results in extracted values of capture cross sections.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
