Abstract
ZnO based magnetic semiconductors (MSs) are prominent candidates for the spintronic devices because of their high Curie temperatures and low conductance mismatches. In this paper the spin-polarized transport in MS/nonmagnetic semiconductor (NMS) p–n junction is investigated. A model is established based on semiconductor drift–diffusion theory and continuity equation. Boundary conditions are obtained from the quasi-chemical potential (QCP) relations at the junction interface. For a ZnO based magnetic p–n junction, we calculate the distributions of carrier/spin density and spin polarization at room temperature. It is demonstrated that by choosing proper parameters, effective spin-polarized injection from ZnO based MS into ZnO can be achieved at room temperature without external spin-polarized injection (ESPI) or large bias.
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