Abstract
In this work the I–V and C-V characteristics of silicon metal/insulator/semiconductor (MIS) tunnel diodes with d.c.-plasma-grown oxide are analysed in order to investigate further some basic relationships between the oxide properties and the plasma anodization conditions. It is shown that once such relationships are established, the device-grade ultrathin (2–5 nm) oxide can be grown on silicon by use of the plasma anodization technique. The MIS tunnel diodes formed in this way exhibit properties comparable with those containing thermally grown oxide.
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