Abstract
Analysis of nonlinear effects in InAlAs/InGaAs -based channels and three-terminal ballistic junctions (TBJs) is performed for applications up to THz range. Results show that InGaAs -based channels designed for ballistic operation exhibit high intrinsic cut-off frequency (fT ~ 10 THz ). Nonlinear effects in TBJs, which result from device geometry and space charge distribution, show good qualitative agreement with published results.
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