Abstract
A field effect transistor (FET) using c-axis aligned crystalline In–Ga–Zn–O (CAAC-IGZO) for an active layer has an extremely low off-state current, which is much lower than an off-state current of a silicon FET. As we measured and analyzed the off-state current, the voltage drop caused by the off-state current in a memory device was found to approach to a stretched exponential function. This is because in the off-state CAAC-IGZO FET, a small number of carriers move discretely and current does not flow uniformly. The low off-state current was also maintained even when its channel length was scaled down to approximately 50 nm.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
