Abstract
NAND-flash memory has the advantages of large capacity and fast rewriting speed. It is suitable for the storage of large amounts of data and is often used as an online storage device for embedded products. However, NAND-flash has the problems of bad blocks and other insufficient reliability.In a certain aerospace model temperature/strain measurement system, the NAND-flash memory is erased and written through DSP software, and the strain/temperature measurement data collected by the sensor is stored in real time. After the system was powered on many times and completed data collection and decoding, it was found that the data stored in the NAND-flash had abnormal faults. By analyzing the test phenomenon and failure mechanism, the failure problem is attributed to the fact that the data in the NAND-flash is not erased, and it is coupled with the newly written data, and it is finally located because the data in the original data address cannot be effectively erased when the data address is stored. Coupling also occurred, resulting in an error in the data address, and the data was coupled after power-on again. Based on the above-mentioned reasons, this paper proposed a troubleshooting method and conducted a test. The verification was successfully passed and the problem was resolved.This method has high reference significance in the large-capacity and high-reliability data storage of NAND-flash in the field of aerospace models.
Highlights
NAND-flash memory has the advantages of large capacity and fast rewriting speed
Based on the above-mentioned reasons, this paper proposed a troubleshooting method and conducted a test
[4] 舒文丽,吴云峰,赵启义,孙长胜,NAND Flash存储的坏 块管理方法[J],电子器件,2011.05。
Summary
NAND-flash memory has the advantages of large capacity and fast rewriting speed. It is suitable for the storage of large amounts of data and is often used as an online storage device for embedded products. 摘要:NAND-flash存储器具有容量较大、改写速度快等优点,适用于大量数据的存储,经常作为嵌入式产品的线上存 储 设 备 , 但 NAND-flash 存在坏块及其他可靠性不足的问题 。 某航天型号温度 / 应变测量系统中 , 通 过 DSP 软 件 对 NAND-flash存储器进行擦除、写入等操作,实时存储传感器采集得到的应变/温度测量数据。在系统多次上电并完成数 据采集和解码后,发现NAND-flash中存储的数据存在异常故障。通过分析试验现象和故障机理,将故障问题归结为 NAND-flash中数据未擦除,与新写入数据发生耦合,最终定位于由于储存数据地址时未能有效擦除原先数据地址中的 数据,也发生了耦合,导致数据地址出错,从而重新上电后数据耦合,根据上述原因本文提出了故障解决方法并及进 行了试验,顺利通过了验证,问题得到解决。该方法在航天型号领域NAND-flash的大容量、高可靠性数据存储方面具 有较高的参考意义。 写入操作之前必须先执行擦除 。 擦 除 NAND 器 件 是 以 8~32KB的块进行的,执行相同的操作最多只需要4ms,而 问题覆盖性不足的问题[1,2,3,4]。在该航天型号系统产品设计 师,集合了上述研究成果及设计思路,但进在行系统测试
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.