Abstract
Modeling the temperature-dependent nonlinearity of intrinsic capacitances in AlGaN/GaN high electron mobility transistors (HEMTs) improves model accuracy. In this letter, extraction results indicate that the current modeling methods cannot accurately reflect the variations of nonlinearity in intrinsic capacitances with temperature. This letter analyzes the causes of unmodeled phenomena and characterizes them based on device physics. Verifications show that the improved intrinsic capacitance model in this letter effectively enhances the accuracy of the HEMT model at non-nominal temperatures.
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