Abstract
This article analyzes the performance of pinned photodiode (PPD) for Time-of-Flight(ToF) applications on high resistivity epitaxial wafers. Due to its wide depletion region, high epitaxial resistivity PPDs feature some key advantages in collecting photogenerated charges. This article compares the demodulation contrast of the same pixel design on epitaxial wafers with different resistivity at near-infrared wavelength to analyze their performance. By comparing the simulated profile of pixels with different epitaxial resistivity, the characteristics of the PPD pixel on high resistivity epitaxial wafer when collecting photogenerated charges are concluded. This article also discusses the effects of using high resistivity epitaxial wafer with various design parameters. It is found that the use of high resistivity epitaxial wafer can greatly improve crosstalk performance, allow pixels to work at higher modulation frequencies, and enable large-sized pixels to have good demodulation capabilities.
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