Abstract
The sintering mechanism of Si3N4-bonded SiC ceramics produced by sintering compacts of powder mixtures of SiC and Si in a nitrogen atmosphere is discussed based on the microstructural analyses by scanninig electron microscopy (SEM) and transmission electron microscopy (TEM). SEM observations showed that amorphous whiskers and fine Si3N4 grains grew on the SiC particles surfaces at the initial stage of sintering, and that amorphous whiskers disappeared to form fine Si3N4 grains when heated to the final sintering temperature of 1350°C. TEM observations showed that Si3N4 grains grew epitaxially on the SiC lattice and no foreign elements such as oxygen were detected at the SiC-Si3N4 interface, and that grain growth of Si3N4 seems to be suppressed by the presence of oxygen.
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