Abstract
The negative capacitance field-effect transistor can break the limitation of the Boltzmann tyranny. In this study, the analog and radio-frequency (RF) performance of a nanometer negative-capacitance fully depleted silicon-on-insulator (NC-FDSOI) transistor is investigated. The analog/RF parameters of the NC-FDSOI device are compared with the conventional FDSOI counterparts for transconductance, output conductance, gate capacitance, cutoff frequency, and maximum oscillation frequency. In addition, the effect of ferroelectric thickness on the analog/RF performance of NC-FDSOI device is analyzed and discussed. The results show that even when operated at low voltages, NC-FDSOI transistors enable analog/RF performance improvement in traditional FDSOI counterparts at low power in the case of a suitable ferroelectric thickness.
Highlights
IntroductionComplementary metal-oxidesemiconductor (CMOS) transistors have experienced unprecedented development, shrinking device sizes, and advances in integrated device design and fabrication, bringing the complementary metal-oxidesemiconductor (CMOS) technology into the nanometer era
In the past decade, complementary metal-oxidesemiconductor (CMOS) transistors have experienced unprecedented development, shrinking device sizes, and advances in integrated device design and fabrication, bringing the CMOS technology into the nanometer era
FDSOI technology is popular because it better overcomes short channel effects and is significantly less expensive to manufacture than fin field effect transistors (FinFETs)
Summary
Complementary metal-oxidesemiconductor (CMOS) transistors have experienced unprecedented development, shrinking device sizes, and advances in integrated device design and fabrication, bringing the CMOS technology into the nanometer era. NCFETs based on ferroelectric on a gate stack have attracted significant attention in the field of advanced CMOS devices due to their lower SS (
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