Abstract
The electrical properties PbO based MOS (metal-oxide semiconductor)-type different Schottky barrier diodes on an Al/PbO/p-Si structure have been investigated and done a comparisonin this study. Al/PbO/p-Si structures were fabricated and their current-voltage (I-V) characteristics were measured at room temperature and in the dark. We tried to obtain information about the structure by comparing the electrical properties of the seven diodes on the Al/PbO/p-Si structure. The electrical characteristic parameters such as saturation current, ideality factor, barrier height and series resistance of the seven Al/PbO/p-Si Schottky barrier diodes were investigated from the forward bias I-V characteristics by using thermionic emission theory. The experimental values of ideality factors for seven diodes have changed from 1.09 to 2.95. The series resistances seven diodes have changed from 1.18 kΩ to 3.20 kΩ by using dV/dln(I)-I characteristics. The barrier heights for seven diodes have changed from 0.64 eV to 0.74eV. The series resistances for seven diodes have changed from 1.41 kΩ to 3.38 kΩ.
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