Abstract
Two-step heat-treated silicon wafers have been used to determine the electrical activity of bulk stacking faults. DLTS measurements by Forbes and Haddad show a dominant energy level at E c − E t = 0.48 ±0.05 eV due to oxygen-induced stacking faults. These wafers have been processed in two different facilities to minimize the possibility that the results might depend on impurities incorporated during wafer processing. Low-temperature, photocapacitance transient spectroscopy (PCTS) was used to study the optical cross section as a function of incident photon energies, in the 1300 to 3000 nm range. PCTS measurements done on the same samples show a dominant level at E c − E t = 0.48 ± 0.05 eV. These results are in excellent correlation with the DLTS measurements.
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