Abstract
Straight In2O3 nanowires (NWs) with diameters of 50 nm and lengths ≥2 μm have been grown on Si(001) via the wet oxidation of In at 850°C using Au as a catalyst. These exhibited clear peaks in the X-ray diffraction corresponding to the body centred cubic crystal structure of In2O3 while the photoluminescence (PL) spectrum at 300 K consisted of two broad peaks, centred around 400 and 550 nm. The post-growth nitridation of In2O3 NWs was systematically investigated by varying the nitridation temperature between 500 and 900°C, flow of NH3 and nitridation times between 1 and 6 h. The NWs are eliminated above 600°C while long nitridation times at 500 and 600°C did not result into the efficient conversion of In2O3 to InN. We find that the nitridation of In2O3 is effective by using NH3 and H2 or a two-step temperature nitridation process using just NH3 and slower ramp rates. We discuss the nitridation mechanism and its effect on the PL.
Highlights
Group III-Nitride (III-N) semiconductors have been investigated extensively over the past decades due to their applications as electronic and optoelectronic devices. They are promising for the realization of high efficiency, multi-junction solar cells since their band-gaps vary from 0.7 eV in InN through to 3.4 eV in GaN up to 6.2 eV in AlN; thereby, allowing the band gaps of the ternaries InxGa1-xN and AlxGa1-xN to be tailored in between by varying x
These In2O3 NWs were slightly tapered; their diameters were larger and lengths were shorter compared to the In2O3 NWs obtained here by wet oxidation
The distribution of the In2O3 NWs obtained by wet oxidation was far superior and much more uniform compared to those obtained by dry oxidation
Summary
Group III-Nitride (III-N) semiconductors have been investigated extensively over the past decades due to their applications as electronic and optoelectronic devices. Upon reaching the growth temperature (TG), the flow of Ar was maintained at 50 sccm for 30 min in order to grow the In2O3 NWs after which the reactor was allowed to cool down in a flow of 50 sccm of Ar for at least 30 min.
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