Abstract
A bonding intensity testing method, called Press-arm model, has been successfully designed and verified by Ansys finite element analysis. The gold–silicon bonding strength [σ2] = 238 MPa has been measured by the Press-arm model. We can probably determine the [σ2] value and compare the bonding strengths by the Press-arm length l. The model can also be used in other type of bonding. The bond region is sufficiently stronger than the silicon substrate. A substrate- Si/Cr/Au/poly - Si/Au and a silicon substrate is bonded at 380–450°C. It occurs as soon as the dissolving of the SiO 2 layer by silicidation of the Cr barrier layer. To avoid gold contamination to the silicon die, an excess annealing temperature (about 20°C higher than Au – Si eutectic horizontal) is used. The bonding surface with brick pattern is in favor of Au – Si bonding.
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