Abstract
An improved equivalent circuit model under pinchoff condition for extracting parasitic model parameters for Double Heterojunction δ-doped PHEMTs is presented. Good prediction for S parameters and noise performance are obtained up to 40GHz. A modified parameter extraction technique based on this new model was use to determine a PHEMT equivalent circuit model. Signification improvements of the accuracy of S parameters are obtained by using the new pinchoff model.
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