Abstract
An improved active region concept for GaSb-based optically pumped vertical-external-cavity surface-emitting lasers (VECSELs) is presented. The concept is based on GaxIn1−xAsySb1−y quantum wells embedded between AlAsySb1−y barrier layers designed for optical in-well pumping. Advantages of this concept are a high modal gain, the suppression of thermal leakage currents, and an improved thermal conductivity of the active region compared to a conventional GaInAsSb/AlGaAsSb active region design. An in-well pumped VECSEL emitting at 2.24 μm has been realized according to this concept, yielding at a heatsink temperature of 20 °C in continuous-wave operation a power slope efficiency of more than 32% and an absorption of the 1.96 μm pump light of more than 50% without pump recycling.
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