Abstract
A flat panel image sensor with a simple structure, which contains only one a-Si:H TFT and a storage capacitor in each pixel, has been proposed. Instead of utilizing external voltage supply, a feedthrough voltage caused by parasitic capacitance of TFT was applied to extract the photogenerated charges in a-Si:H thin film. Decrease of feedthrough voltage owing to the photoleakage current during the transient time caused by gate pulse distortion was estimated to be less than 10%. A 3.8-inch prototype image sensor was fabricated, and sensor operation with 3-4bit still and motion image was successfully obtained. The possibility of high-aperture-ratio LCD with embedded image sensor has been shown.
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