Abstract
The series connection of insulated gate bipolar transistor (IGBT)/diode devices allows the operation at voltage levels higher than the rated voltage of one IGBT/diode. However, due to individual parameter differences of the series-connected IGBT/diodes, it is difficult to ensure a proper voltage balance between them, and transient or steady-state voltage unbalances could cause the failure of these devices. This paper presents an active gate driver developed by the authors that is suitable for the series connection of IGBTs. The proposed active gate driver achieves the transient and steady-state voltage balance between the series-connected IGBT/diode devices. The effectiveness of the gate driver and the active gate control method has been experimentally validated, and promising results have been obtained.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
