Abstract
We present new experimental results for the electrical behaviors of P–N junction diodes irradiated by X-rays. The current–voltage ( I–V) characteristics of the P–N junction diodes were measured at room temperature. The reverse and forward current before and after irradiation can be explained relative to the following parameters: carrier generation lifetime ( τ g ), ideality factor ( n), series resistance ( R s ), and sheet resistance ( ρ). After irradiation at 40 and 55 keV, a small increment in the diode leakage current was seen, while at 70 keV of exposure, the leakage current was slightly decreased. On the other hand, the forward current was dramatically increased by about three orders of magnitude. In addition, the series resistance of the diodes was confirmed to be positively modified by the use of the soft X-ray annealing method.
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