Abstract
A novel on-wafer resistive noise source, useful for noise characterization of microwave devices with the cold noise power measurement technique, is described. The noise source enhances measurement accuracy by providing a calibrated noise temperature directly at the device reference plane. A procedure for determining the excess noise ratio of the noise source is presented and validated up to 40 GHz. The noise source is employed in an on-wafer measurement system, allowing the noise parameters of two-port devices to be extracted. Following a description of the apparatus and measurement procedure, an example of a high-electron-mobility transistor noise parameter measurement at millimeter-wave frequencies is presented.
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